01/99 b-47 ifn5911, IFN5912 n-channel dual silicon junction field-effect transistor absolute maximum ratings at t a = 25?c continuous forward gate current 50 ma continuous device power dissipation 500 mw power derating 4 mw/c storage temperature range C 65c to 200c toe78 package see section g for outline dimensions pin configuration 1 source, 2 drain, 3 gate, 4 case, 5 source, 6 drain, 7 gate, 8 omitted at 25c free air temperature: ifn5911 IFN5912 process nj30l or nj36d static electrical characteristics min max min max unit test conditions gate source breakdown voltage v (br)gss C 25 C 25 v i g = C 1 a, v ds = ?v gate reverse current i gss C 100 C 100 pa v gs = C 15 v, v ds = ?v C 250 C 250 na v gs = C 15 v, v ds = ?v t a = 150c gate operating current i g C 100 C 100 pa v dg = 10 v, i d = 5 ma C 100 C 100 na v dg = 10 v, i d = 5 ma t a = 125c gate source cutoff voltage v gs(off) C 1C 5C 1C 5 v v ds = 10 v, i d = 1 na gate source voltage v gs C 0.3 C 4 C 0.3 C 4 v v ds = 10 v, i d = 5 ma drain saturation current (pulsed) i dss 740740mav ds = 10 v, v gs = ?v dynamic electrical characteristics common source g fs 3000 10000 3000 10000 s v dg = 10 v, i d = 5 ma f = 1 khz forward transconductance 3000 10000 3000 10000 s v dg = 10 v, i d = 5 ma f = 100 mhz common source g os 100 100 s v dg = 10 v, i d = 5 ma f = 1 khz output conductance 150 150 s v dg = 10 v, i d = 5 ma f = 100 mhz common source input capacitance c iss 55pfv dg = 10 v, i d = 5 ma f = 1 mhz common source c rss 1.2 1.2 pf v dg = 10 v, i d = 5 ma f = 1 mhz reverse transfer capacitance equivalent short circuit e n 20 20 nv/ hz v dg = 10 v, i d = 5 ma f = 10 khz input noise voltage noise figure nf 1 1 db v dg = 10 v, i d = 5 ma f = 10 hz r g = 100 k differential gate current |i g1 |C|i g2 |20 20nav dg = 10 v, i d = 5 ma t a = 125c saturation drain current ratio i dss1 /i dss2 0.95 1 0.95 1 v ds = 10 v, v gs = ?v differential gate source voltage v gs1 Cv gs2 10 15 mv v dg = 10 v, i d = 5 ma ? v gs1 Cv gs2 20 40 v/c v dg = 10 v, i d = 5 ma t a = 25c gate source voltage ? t t b = 125c differential drift ? v gs1 Cv gs2 20 40 v/c v dg = 10 v, i d = 5 ma t a = C 55c ? t t b = 25c transconductance ratio g fs1 /g fs2 0.95 1 0.95 1 v dg = 10 v, i d = 5 ma f = 1 khz vhf amplifiers wideband differential amplifiers 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/14/99 11:32 am page b-47
|
